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type ipp039n04l g ipb039n04l g !"#$ %!& ? 3 power-transistor features ? fast switching mosfet for smps ? optimized technology for dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel, logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 100% avalanche tested ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25 c 80 a v gs =10 v, t c =100 c 80 v gs =4.5 v, t c =25 c 80 v gs =4.5 v, t c =100 c 73 pulsed drain current 2) i d,pulse t c =25 c 400 avalanche current, single pulse 3) i as t c =25 c 80 avalanche energy, single pulse e as i d =80 a, r gs =25 w 60 mj gate source voltage v gs 20 v value 1) j-std20 and jesd22 v ds 40 v r ds(on),max 3.9 m w i d 80 a product summary type ipb039n04l g ipp039n04l g package pg-to263-3 pg-to220-3 marking 039n04l 039n04l rev. 1.2 page 1 2009-12-17
ipp039n04l g ipb039n04l g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 94 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.6 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm2 cooling area 4) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =45 a 1.2 - 2 zero gate voltage drain current i dss v ds =40 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =40 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance 5) r ds(on) v gs =4.5 v, i d =80 a - 4.2 5.2 m w v gs =10 v, i d =80 a - 3.1 3.9 gate resistance r g - 1.6 - w transconductance g fs | v ds |>2| i d | r ds(on)max , i d =80 a 75 151 - s 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 5) measured from drain tab to source pin 3) see figure 13 for more detailed information value values 2) see figure 3 for more detailed information rev. 1.2 page 2 2009-12-17
ipp039n04l g ipb039n04l g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 4600 6100 pf output capacitance c oss - 820 1100 reverse transfer capacitance c rss - 39 - turn-on delay time t d(on) - 10 - ns rise time t r - 5.4 - turn-off delay time t d(off) - 38 - fall time t f - 6.0 - gate charge characteristics 6) gate to source charge q gs - 14 - nc gate charge at threshold q g(th) - 7.4 - gate to drain charge q gd - 6.1 - switching charge q sw - 13 - gate charge total q g - 59 78 gate plateau voltage v plateau - 3.0 - v gate charge total q g v dd =20 v, i d =30 a, v gs =0 to 4.5 v - 28 38 nc gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 10 v - 55 - output charge q oss v dd =20 v, v gs =0 v - 42 - reverse diode diode continuous forward current i s - - 78 a diode pulse current i s,pulse - - 400 diode forward voltage v sd v gs =0 v, i f =80 a, t j =25 c - 0.92 1.2 v reverse recovery charge q rr v r =20 v, i f = i s , d i f /d t =400 a/s - 50 - nc 6) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =20 v, v gs =10 v, i d =30 a, r g =1.6 w v dd =20 v, i d =30 a, v gs =0 to 10 v rev. 1.2 page 3 2009-12-17
ipp039n04l g ipb039n04l g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs ! 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 v ds [v] i d [ a ] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z t h j c [ k / w ] 0 20 40 60 80 100 0 50 100 150 200 t c [c] p t o t [ w ] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [ a ] rev. 1.2 page 4 2009-12-17
ipp039n04l g ipb039n04l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3.5 v 4 v 4.5 v 5 v 10 v 0 1 2 3 4 5 6 7 0 40 80 120 160 200 i d [a] r d s ( o n ) [ m w w w w ] 25 c 175 c 0 50 100 150 200 250 0 1 2 3 4 5 v gs [v] i d [ a ] 0 40 80 120 160 200 0 20 40 60 80 100 i d [a] g f s [ s ] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 50 100 150 200 250 0 1 2 3 v ds [v] i d [ a ] rev. 1.2 page 5 2009-12-17
ipp039n04l g ipb039n04l g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =80 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 m a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 1 2 3 4 5 6 7 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ m w w w w ] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v g s ( t h ) [ v ] ciss coss crss 10 4 10 3 10 2 10 1 0 10 20 30 40 v ds [v] c [ p f ] 25 c 175 c 25 c, 98% 175 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [ a ] rev. 1.2 page 6 2009-12-17
ipp039n04l g ipb039n04l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 25 30 35 40 45 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] v gs q g ate v g s(th) q g (th) q g s q g d q sw q g 25 c 100 c 150 c 10 3 10 2 10 1 10 0 10 -1 1 10 100 t av [s] i a v [ a ] 8 v 20 v 32 v 0 2 4 6 8 10 12 0 20 40 60 q gate [nc] v g s [ v ] rev. 1.2 page 7 2009-12-17
ipp039n04l g ipb039n04l g package outline pg-to220-3-1 footprint: packaging: rev. 1.2 page 8 2009-12-17
ipp039n04l g ipb039n04l g package outline pg-to263-3 rev. 1.2 page 9 2009-12-17
ipp039n04l g ipb039n04l g

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rev. 1.2 page 10 2009-12-17

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